发明名称 WIRING METHOD FOR SEMICONDUCTOR ELEMENT
摘要 <p>PURPOSE:To make the potential of any lead equal to that of an element substrate or island of a lead frame without providing a special protrusion to the island. CONSTITUTION:From electrode 3 of the same potential as the substrate, lead-out wiring 7 is extended and at its terminal, auxiliary electrode 3' is provided. Electrode 3' should be positioned closely to holding lead 8 of the island of the lead frame. Connection 4' between electrode 3' and the island or holding lead 8 makes it possible to hold the substrate of element 1 at the same potential as lead 5' and it is unnecessary to provide a special protrusion, so that no addition of kinds of lead framed will be required.</p>
申请公布号 JPS5481775(A) 申请公布日期 1979.06.29
申请号 JP19770149521 申请日期 1977.12.12
申请人 MITSUBISHI ELECTRIC CORP 发明人 TAKEHARA KATSUNAO
分类号 H01L23/52;H01L21/3205 主分类号 H01L23/52
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