| 摘要 |
PURPOSE:To obtain a static semiconductor memory excellent in soft error resistance by opposing fist and third conductive films at a predetermined position only through a second interlayer insulation film thereby increasing the capacitance of a parasitic capacitor existing between the gate electrodes of a driving MOSFET and a load TFT. CONSTITUTION:The static semiconductor memory comprises a bulk MOSFET having a gate electrode comprising a diffusion layer and a first conductive film 8 formed thereon, a first interlayer film 13 formed on the first conductive film 8, and a second conductive film 15 formed thereon while being connected with the diffusion layer. The semiconductor memory further includes a thin film transistor comprising a second interlayer insulating film 16 formed on the second conductive film 15, a gate electrode comprising a third conductive film 18 formed thereon, a third interlayer insulating film 22 formed thereon, and an active layer comprising a fourth conductive film 21 formed thereon. The first conductive film 8 is opposed to the third conductive film 18 at a predetermined position only through the second interlayer insulating film 16. |
