Schwellwertschalter mit negativem differentiellen Widerstand.
摘要
<p>This invention relates to a method of forming a threshold switching device which exhibits negative differential resistance and to the devices formed thereby. The method comprises depositing a silicon dioxide film derived from hydrogen silsesquioxane resin between at least two electrodes and then applying a voltage above a threshold voltage across the electrodes. <IMAGE></p>
申请公布号
DE69202815(D1)
申请公布日期
1995.07.13
申请号
DE1992602815
申请日期
1992.04.24
申请人
DOW CORNING CORP., MIDLAND, MICH., US
发明人
MICHAEL, KEITH WINTON, MIDLAND, MICHIGAN, US;PERNISZ, UDO C., MIDLAND, MICHIGAN, US