| 摘要 |
<p>The present invention teaches a method and structure of decreasing the silicon bandgap of the base of a bipolar junction transistor. The method comprises the step of providing a semiconductor substrate having a base region with a silicon bandgap. The substrate further includes performance characteristics such as a current gain, BVceo and BVcbo breakdown voltages, and a maximum operable temperature. Subsequently, the base region is implanted with a dose of a dopant, preferably Ge. Once doped, an annealing step is performed such that the base's silicon bandgap is substantially reduced, thereby increasing the BJT's current gain, BVceo and BVcbo breakdown voltages, as well as its maximum operable temperature, while decreasing the base resistance Rb and transit time. <IMAGE></p> |
