发明名称 |
Method of making thin film transistor with channel and drain adjacent sidewall of gate electrode |
摘要 |
A thin film transistor and a method which forms a channel region (c), a lightly doped drain region (LDD) region and, optionally, an offset region (o), in a portion of a semiconductor layer which is adjacent a sidewall of the gate electrode without the use of photo masks, thereby increasing the permissible degree of miniaturization and improving production yield.
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申请公布号 |
US5432102(A) |
申请公布日期 |
1995.07.11 |
申请号 |
US19940296172 |
申请日期 |
1994.08.29 |
申请人 |
GOLDSTAR ELECTRON CO., LTD |
发明人 |
CHO, SEOK W.;CHOI, JONG M. |
分类号 |
H01L29/78;H01L21/336;H01L27/12;H01L29/786;(IPC1-7):H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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