| 摘要 |
The semiconductor laser comprises a first conductive substrate(20), a first buffer layer(21) formed on the substrate(20), an electron supply layer(22) formed on the first buffer layer(21), a first barrier layer(23) formed on the electron supply layer(22), an active layer(24) formed on the first buffer layer(21) and formed of a group II-IV semiconductor material, and a cap layer(28) formed on the second buffer layer(27). The barrier region introduces a forbidden zone, which constrains movement of holes and electrons to certain voltage region, which improves the gain of the semiconductors to be used at room temperature.
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