发明名称 REFFERENCE VOLTAGE OF SEMICONDUCTOR MEMORY
摘要 The voltage reference generator consumes low power by modifying the stand-by mode operation of the conventional voltage reference circuit. The generator includes : (a) the first voltage reference generator (10), which has small current driving capability, divides the supply voltage and provides it to the output line as a reference voltage; (b) the second voltage reference generator (20), which is selectively operated according to the standby mode and active mode, provides the divided voltage to the output line and has large current driving capability to suppress noises.
申请公布号 KR950007445(B1) 申请公布日期 1995.07.11
申请号 KR19920020145 申请日期 1992.10.30
申请人 HYUNDAI ELECTRONICS IND. CO., LTD. 发明人 KIM, YONG - HUI
分类号 G11C5/14;(IPC1-7):G11C5/14 主分类号 G11C5/14
代理机构 代理人
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