发明名称 |
Semiconductor device including an anode layer having low density regions by selective diffusion |
摘要 |
A semiconductor diode characterized by an anode electrode structure connected to a double diffusion of P-type impurities in a major surface of an N- semiconductor. The first diffusion forming a first plurality of P- well regions and the second diffusion selectively forming a second plurality of P+ well regions within the first well region.
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申请公布号 |
US5432360(A) |
申请公布日期 |
1995.07.11 |
申请号 |
US19940202195 |
申请日期 |
1994.02.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, HOHYUN;PARK, CHANHO |
分类号 |
H01L29/73;H01L21/331;H01L21/8222;H01L27/06;H01L29/47;H01L29/732;H01L29/861;H01L29/872;(IPC1-7):H01L29/861;H01L29/885 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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