| 摘要 |
PURPOSE:To improve alignment accuracy by detecting secondary electrons generated from an alignment mark part by using an electron beam accelerated at a high voltage when an alignment mark is detected in an electron beam lithography method. CONSTITUTION:The acceleration voltage of the electron beam during alignment is different from that during pattern generation. The acceleration voltage during alignment is 100 to 250kV. When an alignment signal is detected, a secondary electron detector is used and secondary electron 22 generated from an alignment mark part 205 is detected. Thereby, an alignment mark detection signal of good S/N is acquired and the alignment accuracy is greatly improved. |
