发明名称 Metall-Metall-Epitaxie auf Substrate.
摘要 Metal film and metal superlattice structures with controlled orientations are grown at room temperature using a silicon or germanium substrate (12) coated with an epitaxially grown copper layer (10). The metal films (14) are preferably deposited by electron beam evaporation without external heating of the copper coated substrate (12). <IMAGE>
申请公布号 DE69109921(D1) 申请公布日期 1995.06.29
申请号 DE1991609921 申请日期 1991.03.06
申请人 INTERNATIONAL BUSINESS MACHINES CORP., ARMONK, N.Y., US 发明人 CHANG, CHIN-AN, PEEKSKILL, N.Y. 10566, US
分类号 C23C14/14;C30B23/02;C30B23/08;C30B25/02;C30B25/18;C30B29/06;H01L21/205 主分类号 C23C14/14
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