| 发明名称 |
Method and dielectric structure for facilitating overetching of metal without damage to inter-level dielectric. |
| 摘要 |
<p>Integrated circuit fabrication with a thin layer (230) of oxynitride atop the interlevel dielectric (220), to provide an etch stop to withstand the overetch of the metal layer (300). <IMAGE></p> |
| 申请公布号 |
EP0660393(A1) |
申请公布日期 |
1995.06.28 |
| 申请号 |
EP19940308743 |
申请日期 |
1994.11.25 |
| 申请人 |
STMICROELECTRONICS, INC. |
发明人 |
SARDELLA, JOHN C. |
| 分类号 |
H01L21/3213;H01L21/768;H01L23/528;H01L23/532;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/3213 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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