Semiconductor storage device having word-line voltage booster circuit with decoder and charger

摘要

A semiconductor storage device having a word-line voltage booster circuit includes: a plurality of word-lines connected to each memory cell array; a drive signal generation circuit for producing a word-line drive signal having a voltage higher than a power supply voltage; a decoder circuit for transmitting the word-line drive signal produced by the drive signal generation circuit, when the drive signal generation circuit is selected by an address signal; and a charging circuit connected to a signal path which transmits the word-line drive signal from the drive signal generation circuit to the decoder circuit. The charging circuit charges the signal path before the word-line drive signal is output to the signal path.