发明名称 |
Semiconductor light emitting element |
摘要 |
A semiconductor light emitting element has a semiconductor laminating structure formed on a semiconductor substrate and having a junction portion formed in parallel with a semiconductor substrate face; a light generating portion formed in the vicinity of the junction portion such that an electric current can be injected into the light generating portion; a light emitting end face approximately perpendicular to the junction portion and approximately having an arc or hyperbolic shape in a direction parallel to the semiconductor substrate face; and an electrode for electric current injection formed in an upper portion of the semiconductor laminating structure and arranged in a position separated from at least a center of curvature of the arc light emitting end face. The semiconductor light emitting element has a shape of the light emitting portion and a layer structure capable of controlling a radiant angle of light. Since the light emitting end face is formed in an arc shape, a full angle at half maximum of emitted light in a horizontal direction with respect to the substrate face can be reduced in comparison with a case in which the light emitting end face has a linear shape. Optical coupling efficiency with respect to an optical fiber and a lens system can be improved.
|
申请公布号 |
US5428227(A) |
申请公布日期 |
1995.06.27 |
申请号 |
US19940213575 |
申请日期 |
1994.03.16 |
申请人 |
RICOH COMPANY, LTD.;RICOH RESEARCH INSTITUTE OF GENERAL ELECTRONICS CO., LTD. |
发明人 |
SATOH, SHIRO |
分类号 |
H01L33/14;H01L33/20;H01L33/28;H01L33/30;H01L33/40;H01L33/58;H01S3/00;H01S5/00;H01S5/022;H01S5/10;(IPC1-7):H01L29/41;H01L33/00;H01S3/19 |
主分类号 |
H01L33/14 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|