发明名称 Method of making a diamond film
摘要 A process of forming high quality diamond films, wherein non-diamond components and crystal defects are significantly reduced. Diamond films are formed on a diamond substrate by vapor-phase synthesis using a source gas, wherein the atomic concentrations of oxygen and carbon, [0] and [C], respectively, in the source gas satisfy the condition that 0.01</=[C]/([C]+[O])</=0.40. Boron (B) doped p-type semiconducting films can also be formed using the same source gas which further includes a B-containing compound.
申请公布号 US5427054(A) 申请公布日期 1995.06.27
申请号 US19940254762 申请日期 1994.06.06
申请人 KABUSHIKI KAISHA KOBE SEIKO SHO 发明人 SAITO, KIMITSUGU;MIYATA, KOICHI
分类号 C23C16/27;C30B25/02;C30B29/04;H01L21/205;(IPC1-7):C30B29/04 主分类号 C23C16/27
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