发明名称 |
Method of making a diamond film |
摘要 |
A process of forming high quality diamond films, wherein non-diamond components and crystal defects are significantly reduced. Diamond films are formed on a diamond substrate by vapor-phase synthesis using a source gas, wherein the atomic concentrations of oxygen and carbon, [0] and [C], respectively, in the source gas satisfy the condition that 0.01</=[C]/([C]+[O])</=0.40. Boron (B) doped p-type semiconducting films can also be formed using the same source gas which further includes a B-containing compound.
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申请公布号 |
US5427054(A) |
申请公布日期 |
1995.06.27 |
申请号 |
US19940254762 |
申请日期 |
1994.06.06 |
申请人 |
KABUSHIKI KAISHA KOBE SEIKO SHO |
发明人 |
SAITO, KIMITSUGU;MIYATA, KOICHI |
分类号 |
C23C16/27;C30B25/02;C30B29/04;H01L21/205;(IPC1-7):C30B29/04 |
主分类号 |
C23C16/27 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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