| 摘要 |
PURPOSE:To provide a semiconductor device having excellent heat dissipation by adding a given amount of a rate earth element compound to AlN containing <=a specific amount of oxygen, forming, firing to give a sintered compact of AlN having a high thermal conductivity and arranging a semiconductor element on the sintered compact of AlN. CONSTITUTION:(A) A main component comprising aluminum nitride containing <=1.0wt.% of oxygen is mixed with (B) 0.01-15wt.% calculated as rare earth element of one or more oxides or carbonates (e.g. samarium oxide powder) of a rare earth element selected from yttrium, lanthanum, praseodymium, neodymium, samarium, gadolinium and dysprosium. Then the raw material is formed and sintered to produce a sintered compact of aluminum nitride having a density of >=90% theoretical density and >=40W/m.k thermal conductivity at a room temperature. The sintered compact of aluminum nitride is used as a radiating plate and a semiconductor element is arranged on the radiating plate to produce a semiconductor device. |
