| 摘要 |
PURPOSE:To provide the formation method of a capacitance element, for a DRAM, which can suppress a reduction in a capacitance value and which can suppress a degradation in a leakage current characteristic. CONSTITUTION:A rapid thermal nitriding operation is executed to a capacitance lower-part electrode 2 which is composed of a polycrystal silicon film, so that a capacitance lower-part electrode 2A is formed. A tantalum oxide film as a capacitance insulating film is subjected to densification operation, and a tantalum oxide film 11A is formed. A capacitance upper-part electrode which is composed of a titanium nitride film is formed and then subjected to a nitriding operation, so that a capacitance upper-part electrode 3A is formed. |
