| 摘要 |
PURPOSE:To obtain a high-reliability semiconductor laser and a method for manufacturing it by relieving stress due to a deviation in composition ratio of a current block layer by a mesa. CONSTITUTION:This semiconductor laser has a double hetero structure machined from a clad layer 2 in a mesa stripe form and a current block layer 8 which selectively buries the mesa side face and the bottom face of this clad layer 2. A raw material gas used for selectively growing the current block layer 8 is mixed with a trace of HCl gas to accelerate the reevaporation of a raw material species on a selective mask. This relieves a deviation in composition ratio at an edge of a selective mask, thereby reducing the projection thickness of the current block layer in a mesa side face to a 10% or less of the thickness of the current block layer in a flat part.
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