THIN-FILM TRANSISTOR AND ITS MANUFACTURE

摘要

PURPOSE:To realize a reliable thin-film transistor at high yield rate while improving step coverage at edges of a gate electrode as well as decreasing failures such as discontinuity and degraded insulation. CONSTITUTION:A thin-film transistor has a gate electrode composed of a first metal layer 2 of aluminum and a second metal layer 8 of aluminum containing anodizable metallic impurity. The second metal layer has an anodized surface 3 and completely covers the first metal layer. When this thin-film transistor is used as a switching element for a TFT-LCD, it is possible to remarkably reduce the resistance of gate lines, thus eliminating the problem of gate signal delay. Further, a reliable TFT-LCD can be realized at a high yield rate.