MEMORY CELL AND MEMORY DEVICE

摘要

PURPOSE:To realize a static memory cell having high resistance to soft error generated by alpha ray. CONSTITUTION:A memory cell 200 has a coupling capacitor Cc between two information storage nodes 1, 2. A p well (or p substrate), in which drive MOS transistors Mn5 and Mn4 and transfer MOS transistors Mn1 and Mn2 are formed, is connected to a Vbb generating circuit 210. The voltage Vbb is set lower than a low level VL of a signal potential of the memory cell. This causes a parasitic diode between the sources of MN1. to MN4 or a n type diffusion layer corresponding to a drain and the p well (or p substrate) not to be ON even when a potential fluctuation DELTAVL of the node 2 on the low potential side is large, thus preventing mal function.