FABRICATION OF OPTICAL WAVEGUIDE

摘要

PURPOSE:To form an ideal optical waveguide having no dislocation by impurity diffusion. CONSTITUTION:An insulating film comprising an SiN diffused stripe block layer 11 is deposited on AlGaInP based multilayer semiconductor films 2-8 deposited on a semiponductor substrate 1. Impurities are then diffused in vapor phase from above the multilayer semiconductor film using the insulating film as a mask thus producing mixed crystal in a region 41 except the part immediately under the insulating film.