| 摘要 |
PURPOSE: To substantially double the surface area of a gate line by forming a gate electrode of a thin-film transistor, whose gate is located on a lower side (a substrate side) using a conductive film that has granular irregularities on its surface. CONSTITUTION: A silicon oxide film 22 is evaporated on a semiconductor silicon substrate 21 as an insulating film. Then, a conductive film 23' for forming gate interconnections (a gate electrode and a gate line) are formed on the film 22, and a polysilicon film 212 is evaporated thereon, with the film 212 having a semispherical granular surface. A conductive film, having a semispherical granular surface or a surface with irregularities, is formed in this way. Therefore, the surface area of the gate line can be substantially doubled. As a result, an OFF-current can be reduced almost to a half.
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