BORON ESTIMATION METHOD OF BONDING INTERFACE OF STACKED SUBSTRATE

摘要

PURPOSE:To enable the conversion from the boron profile obtained by SIMS measurement to the value of boron surface density, and simply estimate the boron amount existing on the interface of a stacked substrate, as the boron surface density. CONSTITUTION:A plurality of reference specimens in which boron of various kinds of dosage is shallowly implanted by ion implantation are formed. After the specimens are subjected to heat treatment whose temperature and time are identical to those of the heat treatment in the case of obtaining a stacked substrate, the boron profile in the depth direction of interface of the reference specimen is measured by SIMS. The result is compared with the practically measured boron profile of the substrate to be estimated. The dosage of boron of a reference specimen showing a boron profile equivalent to the practically measured boron profile is converted and estimated as the boron surface density in the interface of the substrate before stacked through a heat treatment.