Non-volatile memory devices.

摘要

A non-volatile memory device is provided having an array with self-aligned interpoly dielectrics placed between a stacked pair of polysilicon strips. The self-aligned interpoly dielectrics are aligned with the edges of the stacked polysilicon strips to provide good coupling between the polysilicon strips as well as to insure additional oxide does not grow during times in which bit line oxides are formed over virtual ground bit line diffusions. The self-aligned interpoly dielectrics need not be removed during the fabrication process and, accordingly, additional thermal cycles necessary to remove and then re-form an additional (or replacement) dielectric need not occur. Additionally, wet oxide is placed at the polysilicon/silicon-oxide interface followed by dry oxide in order to enhance data retention of the floating polysilicon while further minimizing thermal cycles and short-channel effects associated therewith. <IMAGE> <IMAGE>