FLASH EEPROM CELL AND MANUFACTURING METHOD THEREOF

摘要

forming a gate oxide film (2') on the active region (11) of semiconductor substrate (1); removing the one side of the film (2') adjacent to the source electrode to expose the substrate (1); forming a tunnel oxide film (2) on the exposed substrate (1); forming a 1st polysilicon layer (13) on the films (2',2) to form a interlayered insulating layer (4) thereon; forming a 2nd polysilicon layer (13') thereon; patterning the layers (13,13') to form a floating gate electrode (3) and a control gate electrode (5); and forming source and drain electrodes (6,7) on both sides of the electrodes (3,5), thereby forming a thin tunnel oxide film and a thick gate oxide film to improve the number of rewriting.