| 摘要 |
The present invention relates to semiconductor devices with ohmic contact to ZnSe-based layers and lasers derived therefrom wherein BeTe is used in a graded band gap layer. Preferably, an ohmic contact layer of BeTe-containing graded composition is used which consists essentially of BexZn1-xTexSe1-x wherein x is within the range of 0 and 1 selected so as to provide substantial lattice matching to the lattice structure c the substrate. Specifically, BexZn1-xTexSe1-x graded gap semiconductor layers are provided for application as ohmic contacts to p-type ZnSe, ZnSxSe1-x, Zn1-xCdxS, Zn1-xCdxSySe1-y, Zn1-xMgxSySe1-y (wherein x and y are a number selected from 0 to 1) and other II-VI compound semiconductors used in lasers grown on GaAs substrates. Due to the close lattice match to GaAs substrate, graded (BeTe)x (ZnSe)1-x contact allow for the entire device structure to be grown within the pseudomorphic limit.
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