| 摘要 |
PURPOSE:To obtain, in a short time, exposure data subjected to processing operations such as a margin-width processing operation, an auxiliary-pattern processing operation and the like by a method wherein the margin-width processing operation is executed on the basis of whether the distance to a cell pattern generated on the basis of cell data immediately before is a margin width or lower. CONSTITUTION:When cell patterns 26 are arranged so as to be adjacent via a gap (i) of a margin width W or lower, a slit is formed or not formed in the gap between expected patterns due to an irregularity in the proximity effect of a beam exposure treatment. Then, gap patterns 26a which fill the gap (i) of the margin width W or lower are generated. After that, when an OR processing operation which changes individual bonded patterns into one pattern is executed, the cell patterns 26 and the gap patterns 26a are coupled, and one cell pattern 26' is formed. When such a margin-width processing operation is performed, no disagreement is caused in the inspection of a reticle. |
