| 摘要 |
<p>PURPOSE:To provide a thin-film transistor substrate adaptable to high-density gate terminal arrangement and its manufacturing method. CONSTITUTION:This relates to a thin-film transistor substrate which is provided with a thin-film transistor of reverse-staggered structure in which a gate electrode 12, a gate insulating film 13, a semiconductor active film 14 and a source electrode 16 and a drain electrode 17 are formed in order on a substrate 11, a gate terminal 18 and a gate wiring 21 for transferring a scanning signal to a gate electrode, a source terminal 19 and a source wiring 22 for transferring a data signal to a source electrode. Therefore, the gate terminal is formed on the upper side of the gate insulating film and is electrically connected with the gate wiring through a contact hole 23 formed in the gate insulating film. Also, this is manufacturing method for a thin-film transistor substrate in which a conductive layer constituting the gate terminal is formed after the gate insulating film is formed.</p> |
