| 摘要 |
PURPOSE:To simplify patterning of a lower layer reflection preventive film for suppressing a reflected light from a substrate board. CONSTITUTION:A novolak resist 102 for the i line is formed on a semiconductor substrate 101, and a resist 103 a KrF excimer laser is formed in its upper layer (step A). Then, the resist pattern 103 for the KrF is formed by selectively exposing and developing with the KrF excimer laser (step B). Then, a resist pattern 102a for the i line is formed by exposing and developing the entire surface with the i line (step C), thereby forming a multilayer resist pattern. Thud, a throughput of about five times as large as the case of a conventional dry etching can be obtained, dimensional controllability is excellent, and a fine pattern can be formed with excellent reproducibility. |
