| 摘要 |
PURPOSE:To solve the problems on the element isolation caused by the selectivity of CVD by depositing a titanium oxide before the formation of platinum that becomes lower electrode, providing the titanium oxide at the bottom surface part of a groove, forming a high-dielectric-constant insulating film, and keeping the AC and DC electric insulation between neighboring electrodes. CONSTITUTION:A thin TiO2, layer 103 of about 10nm is provided between a lower capacitor electrode 104 and an active element layer 102 and on an interlayer insulating layer 102 for providing electric insulation between lower electrodes. A conductor plug 105, which is penetrated through the two layers 102 and 103 for electric connection, is arranged, and the conductance between a lower electrode 104 and an active element layer 101 is secured. A high dielectric-constant insulating film 601 is deposited by 50nm on this structure. Therefore, the high-dielectric-constant insulating film 601 a satisfies a stoichimmetry composition on platinum, and titanium atoms have the more excessive composition than the stoichmetry composition at the bottom surface of a groove. The non-stoichiometry composition film at the bottom surface becomes the film having the low dielectric constant and the high insulation, and the electric insulation between the neighboring electrodes is maintained. |
