| 摘要 |
<p>To provide a semiconductor optical element which achieves uniform distribution of carriers, a reduction of threshold current, an increase of light output, and high speed operation. In a lateral current injection semiconductor optical element wherein an active layer comprises multiple quantum well structure (34) and wherein current can be injected in a transverse direction relative to the multiple quantum well structure (34), at least one of well layer (34a) and barrier layer (34b) which constitute the multiple quantum well structure (34) has compressive strain. Since the well layer (34a) and/or barrier layer (34b) of the multiple quantum well structure (34) has compressive strain, the energy band structure varies due to the compressive strain, and when lateral current is injected to the multiple quantum well structure (34), an effective mass in a direction inward of the surface of a heavier hole is reduced. Therefore, the mobility of holes increases and the distribution of carriers becomes uniform, whereby the element properties are improved.</p> |
