| 摘要 |
A semiconductor device has an n<+> source region, a first n<-> channel region, a barrier layer, a second n<-> channel region, a pair of n<+> drain regions, an insulating film, and a pair of metal electrodes over the respective n<+> drain regions, all successively disposed on an upper surface of an n<+> crystal substrate. The drain regions and the metal electrodes jointly provide a storage electric capacitance. A source electrode is disposed on the lower surface of the n<+> crystal substrate. Bit information can be written and read at a high speed by tunneling through the barrier layer. According to a method of manufacturing the above semiconductor device, the n<+> source region, the first n<-> channel region, the barrier layer, the second n<-> channel region, the n<+> drain regions, the insulating film, and the metal electrodes are successively deposited on the n<+> crystal substrate in a growing apparatus. The metal electrodes and the source electrode are formed by depositing a metal and a low-resistance semiconductor selectively or both in one location within the growing apparatus. <IMAGE> |
