| 摘要 |
A method is provided for forming a local interconnect (24) at a face of semiconductor workpiece (10). A layer of conductive material (24) is formed across the workpiece face, followed by the formation of a layer (28) of photoresist adjacent the layer of conductive material (24). The layer of photoresist (28) is patterned to define selected areas of the layer of conductive material (24) to be removed. A dry etch is performed, using a plasma established in a gaseous mixture of carbon tetrachloride, carbon tetrafluoride, and helium, to remove the selected areas of the conductive material and conductive filaments (26) formed at the face of workpiece (10).
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