发明名称 |
Pre-poly emitter implant |
摘要 |
A process of forming an emitter of a bipolar transistor is described. Dopants of a first conductivity type is implanted in the substrate to form the base. Dopants of a second conductivity type is then implanted into the base region to form a substrate emitter region. A polysilicon layer is then deposited over the substrate emitter and doped to form the doped polysilicon layer. An outdiffusion step follows to link the doped polysilicon layer to the substrate emitter.
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申请公布号 |
US5420051(A) |
申请公布日期 |
1995.05.30 |
申请号 |
US19930174291 |
申请日期 |
1993.12.28 |
申请人 |
INTEL CORPORATION |
发明人 |
BOHR, MARK T.;TAYLOR, RICHARD G.;CHAMBERS, STEPHEN T. |
分类号 |
H01L21/331;(IPC1-7):H01L21/265;H01L21/44 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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