发明名称 CONNESSIONE A DOPPIO FORO METALLIZZATO AD INDUTTANZA PARASSITA RIDOTTA
摘要 <p>An electrical connection is described through a dielectric substrate that supports planar circuits, realised via a double metallized hole. The metallization of the holes extends beyond the rims of same on the two sides of the substrate and on at least one of them takes on a particular "eyeglass" shape which enables, as regards the example of rectangular pads, a shortening of the distance between the end of the track and the line joining the centres of the holes. The currents circulating between the track and the holes are thus forced to follow shorter distances and the stray inductance of the connection undergoes a reduction which facilitates the passage of the high-frequency currents through the connection. A further progression of the track is only possible by spacing the holes further apart, which of course would increase the stray inductance, but a compromise between progression of the track and greater spacing between the holes makes it possible to minimise the inductance of the connection. <IMAGE></p>
申请公布号 ITMI951075(D0) 申请公布日期 1995.05.25
申请号 IT1995MI01075 申请日期 1995.05.25
申请人 SIEMENS TELECOMUNICAZIONI S.P.A. 发明人 BONATO PAOLO;CARCANO GIORGIO;CERIANI MAURIZIO;GAIANI DANILO
分类号 H01L;H01L21/70;(IPC1-7):H01L21/70 主分类号 H01L
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