Zwischenmetallische Mehrschicht-Verbindung für Halbleitervorrichtungen.

摘要

A sputtered low copper concentration multilayered device interconnect metallurgy structure is disclosed herein. The interconnect metallurgy is seen to comprise a four-layer structure over an interplanar stud connection (10) surrounded by an insulator (8) to make connection to a device substrate (6). The four-layer structure consists of an intermetallic bottom layer (12 min ) typically 700 ANGSTROM thick and, in a preferred embodiment would comprise TiAl3. Above is a low percent (< 2%) weight percent copper, aluminum-copper, conductor layer (14). At the end of the process, this layer (14) is typically 8500 ANGSTROM thick and consists of a compositon of 99,5% aluminum and 0,5% copper (aluminum-0,5% copper hereafter). Over said conductor layer (14) is a second intermetallic layer (16 min ) of the same thickness and composition as the first intermetallic layer (12 min ). Finally, a top layer (18) of aluminum-0,5% copper (or pure aluminum) of approximately 100 ANGSTROM to 500 ANGSTROM thick achieves the structure.