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发明名称
MOSFET aus Silizium mit einer durch eine Germanium-Dotierung verlängerten Lebensdauer.
摘要
申请公布号
DE69018744(D1)
申请公布日期
1995.05.24
申请号
DE19906018744
申请日期
1990.09.13
申请人
AT & T CORP., NEW YORK, N.Y., US
发明人
NG, KWOK KWOK, BERKELEY HEIGHTS, NEW JERSEY 07922, US;PAI, CHIEN-SHING, BRIDGEWATER, NEW JERSEY 08807, US
分类号
H01L29/73;H01L21/265;H01L21/331;H01L21/336;H01L29/08;H01L29/10;H01L29/167;H01L29/78;(IPC1-7):H01L29/08
主分类号
H01L29/73
代理机构
代理人
主权项
地址
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