Dry exhaust gas conditioning

摘要

A gas treatment method and apparatus for use in connection with processes of etching semiconductor devices or of plasma enhanced chemical vapor deposition onto semiconductor materials. In accordance with the method and apparatus, the exhaust gases are introduced into first and second stages while heating the first and second stages. The stages can be contained within a heated cartridge. The first stage contains silicon or a silicon-rich alloy or a silicon-rich substance in a particulate form and a partial coating of copper or a copper rich substance in intimate contact with the silicon, the silicon-rich alloy or the silicon-rich substance. The second stage contains calcium oxide, a calcium oxide containing material, or a soda lime containing medium.