发明名称 |
PRODUCTION OF PHASE SHIFT MASK BLANK AND PRODUCTION OF PHASE SHIFT MASK |
摘要 |
PURPOSE:To produce a phase shift mask blank with an etching stopping layer having acid resistance as well as basic properties as an etching stopping layer and to produce a phase shift mask. CONSTITUTION:An etching stopping layer 2 for stopping the etching of a phase shift layer 3 at the time of etching the layer 3 is made of a material contg. Al2O3 and SnO2 and the etching stopping layer 2 is heat-treated to produce the objective phase shift mask blank with an etching stopping layer 2 having superior acid resistance as well as basic properties as an etching stopping layer. The objective phase shift mask is produced using the phase shift mask blank. |
申请公布号 |
JPH07134389(A) |
申请公布日期 |
1995.05.23 |
申请号 |
JP19930155436 |
申请日期 |
1993.06.25 |
申请人 |
HOYA CORP |
发明人 |
OKUBO AKIRA;MIURA TOSHINOBU;SAKAI HIROYUKI;YAMAGUCHI YOICHI |
分类号 |
G03F1/29;G03F1/32;G03F1/68;G03F1/80;H01L21/027 |
主分类号 |
G03F1/29 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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