发明名称 JOINING METHOD OF CERAMIC AND SILICON
摘要 PURPOSE:To obtain a joined body which is simply and strongly joined and has the strength which withstands the temp. of >=1000 deg.C by joining the surface of the active metal layer formed at the joint surface of ceramic and a heat- treated silicon surface with a metallic material. CONSTITUTION:The film of the active metal such as titanium is formed on the non-oxide material-based ceramic such as silicon nitride and carbon nitride in an Ar atmosphere of order of 5X10<-3>Torr by a sputtering method to form the active metal layer of a titanium film having 1000-3000Angstrom thickness, then, the film is subjected to a heat treatment at 800-1200 deg.C in vacuum to form TiN or TiC at the boundary of the non-oxidized ceramic and the titanium film. An opposite silicon is subjected to the heat treatment at about 1150 deg.C in a carbon atmosphere and its surface is converted into SiC, and the metallic plate consisting of gold or gold-nickel is inserted between the non-oxide ceramic and the titanium film, and is subjected to a heat joining at 1063 deg.C (m.p. of gold)-1150 deg.C in the case of a pure gold and at 1020-1100 deg.C in the case of a gold-nickel.
申请公布号 JPH07133164(A) 申请公布日期 1995.05.23
申请号 JP19930298898 申请日期 1993.11.04
申请人 NIPPON CEMENT CO LTD 发明人 MINAMI NOBUYUKI;ISHIDA YOICHI;TAKAHASHI SHIGERU
分类号 C04B37/00;H01L21/52;H01L23/12;(IPC1-7):C04B37/00 主分类号 C04B37/00
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