| 摘要 |
PURPOSE:To obtain a semiconductor device manufacturing method by which an air-bridge wiring and a via-hole wiring, which is located in the vicinity of the air-bridge wiring, can be formed simultaneously by one electroplating and the process of manufacture can be simplified sharply. CONSTITUTION:After the first resist film 117, having an air-bridge wiring pattern, has been formed, the first power feeding layer 13 is formed on the whole surface, and the first power feeding layer 13 and a substrate 1 are etched using the second resist film 118, having the pattern for via hole, as a mask, and a via hole 212a is formed. Then, the second power feeding layer 23 is formed, an electroplating is conducted using the third resist film 119, having the prescribed pattern, as a mask, and an air-bridge wiring and the wiring in the via hole are integrally formed. |
