HALFTONE-SYSTEM PHASE SHIFT MASK AND PRODUCTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To provide such a halftone-system phase shift mask that a light- shielding zone can be formed in the same process and at the same time as forming a semi light-shielding region and that exposure light can be surely cut by the light-shielding zone. CONSTITUTION:This halftone-system phase shift mask 10 has a pattern region 16 consisting of a semi light-shielding zone 14 and a light-transmitting zone 12 comprising recessed part of the substrate 20. The phase of the light transmitting through the semi light-shielding zone 14 is different from the phase of the light transmitting through the light-transmitting zone 12. A light-shielding zone 30 is formed around the pattern region 16. This light-shielding zone 30 consists of a light-transmitting region 32 of the light-shielding zone comprising a recessed part of the substrate 20 and a semi lightshielding region 34 of the light-shielding zone alternately arranged. The phase of the light transmitting through the semi light-shielding region 34 is different from the phase of the light transmitting through the light-transmitting region 32.