| 摘要 |
The method includes the steps of sequentially forming a 1st insulating film (2), a poly-Si film (3), a 2nd insulating film (4) on a semiconductor substrate (1), depositing a thin scattered reflecting silicon film (5) thereon, and depositing a photoresist film (6) on the film (5) to expose the whole substrate with a patterned film (6), thereby forming a thin scattering film under the photoresist film to reduce the generation of standing waves due to the reflection lights.
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