| 摘要 |
PURPOSE:To take advantage of the ray of the sun in a wide range of wave length without having the complicated lamination structure and manufacturing process such as a tandem cell by a method wherein an energy level, with which the excitation of electrons from a valence band to a conduction band are relayed, is provided in the forbidden band of a light-absorbing semiconductor layer. CONSTITUTION:An Fe-doped CuInSe2 (CuInSe:Fe) layer 6 is formed by a four- source simultaneous vapor deposition method using Cu, In, Se and Fe as the four vapor deposition sources. This light-absorbing semiconductor layer 6 has the energy level, which relays the excitation of electrons from a valence band to a conduction band. As a result, this level is utilized for light excitation process, the light having the energy lower than the forbidden band width, which was not absorbed and transmitted in the past, can be absorbed and it can be converted to electric energy. |
