Verfahren zum Herstellen eines planaren Halbleiterlasers mit vergrabener Streifenstruktur.,申请号DE1992601891-传众专利搜索

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发明名称	Verfahren zum Herstellen eines planaren Halbleiterlasers mit vergrabener Streifenstruktur.
摘要
申请公布号	DE69201891(D1)	申请公布日期	1995.05.11
申请号	DE1992601891	申请日期	1992.01.29
申请人	ALCATEL N.V., AMSTERDAM, NL	发明人	GOLDSTEIN, LEON, F-92370 CHAVILLE, FR;BONNEVIE, DOMINIQUE, F-91310 LEUVILLE SUR ORGE, FR;BRILLOUET, FRANCOIS, F-92310 SEVRES, FR;POINGT, FRANCIS, F-91700 SAINTE GENEVIEVE DES BOIS, FR;LIEVIN, JEAN-LOUIS, F-7502 PARIS, FR
分类号	H01S5/00;H01S5/20;H01S5/227;(IPC1-7):H01L33/00;H01S3/19	主分类号	H01S5/00
代理机构		代理人
主权项
地址

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