| 摘要 |
PCT No. PCT/JP89/01299 Sec. 371 Date Jun. 21, 1991 Sec. 102(e) Date Jun. 21, 1991 PCT Filed Dec. 25, 1989 PCT Pub. No. WO90/07591 PCT Pub. Date Jul. 12, 1990.A method for producing a thin oxide superconducting film possessing high crystallinity and excellent quality and a novel single crystal as a substrate allowing easy formation of an epitaxial film of high quality usable for the method are provided. The method for the production of the thin oxide superconducting film is characterized by using as a substrate a single crystal of SrLaGaO4 which is a high-melting oxide and effecting epitaxial growth of a thin oxide superconducting film on the substrate. The single crystal used as a substrate is an oxide single crystal possessing a crystal structure of the K2NiF4 type and having a composition of Sr1-XLa1-YGa1-ZO4-W (wherein X, Y, Z, and W fall in the following respective ranges; -0.1<X<0.1, -0.1<Y<0.1, -0.1<Z<0.1, and -0.4<W<0.4).
|
