| 摘要 |
<p>A method of manufacturing such a MIS field effect semiconductor device that the film thickness of its effective gate insulating film changes with variation of the voltage between its gate and source. An insulating film (14) is formed in an element region between element isolating regions (13). A semiconductor layer (15) is formed on the insulating film (14). A semiconductor layer (12) is lightly doped with ions of impurities of the opposite conductivity type to that of the semiconductor substrate (12) so as to form a mask (18). A gate electrode (17) and a gate insulating film (16) are formed by anisotropic etching. Then source/drain diffusion layers (23) and (24) having high impurity concentrations are formed by masking the electrode (17).</p> |
