| 摘要 |
<p>PURPOSE:To downsize and lighten the device, improve the quality of a thin film and improve the manufacturing safety by continually performing CVD film formation and sputtering film formation without exposing the base to the oxide atmosphere. CONSTITUTION:CVD film formation is performed by applying highfrequency power on first and second electrodes 25 and 30, mounting a base 23 on the second electrode 30 and supplying a film forming chamber 10 with reaction gas. Sputtering film formation is performed by mounting a target 21 on the first electrode 25 and mounting the base 23 on the second electrode 30 and applying high-frequency power to the electrodes 25 and 30. The CVD film formation and the sputtering film formation are continually performed without exposing the base 23 to the oxide atmosphere. Therefore, in the case of accumulating a plurality of films, films can be accumulated by the CVD film formation and the sputtering film formation without oxidizing the film. Thus, a thin film manufacturing device is downsized and lightened, the quality of the thin film is improved and the manufacturing safety is improved.</p> |
