| 摘要 |
<p>A method of feeding into a chamber (3) to form a film on a wafer, alternately reaction gas through a reactive gas feed line (1) comprising a chamber pressure regulator (4) and a line changeover valve V1, and inert gas through an inert gas feed line (2) comprising a chamber pressure regulator (5) and a line changeover valve V2, wherein shunt valves V3, V4, are connected to the primary side of the changeover valves V1, V2 of the lines (1,2) and a vent line (6) is connected to the outlet side of the shunt valves V3, V4, the line changeover valve V1 of the reactive gas feed line (1) and shunt valve V4 of inert gas feed line (2) being opened and closed together and the line changeover valve V2 of the inert gas feed line (2) and the shunt valve V3 of the reactive gas feed line (1) being opened and closed together at specific time intervals while the vent line (6) is evacuated, so that the reactive gas and inert gas may be alternately fed into the chamber (3) from the reactive gas feed line 1 and inert gas feed line (2). <IMAGE></p> |
