| 摘要 |
To provide a power IC semiconductor device that includes a temperature monitoring element that more accurately monitors the temperature of the power element in the power IC device, the semiconductor device is composed of an element (11) formed on a semiconductor substrate (13) and driven by supplied electric power; and a temperature monitoring element (18), for detecting the temperature of the element (11), formed over the substrate (13) in such a configuration that temperature monitoring element (18) is substantially surrounded by the element (11). |
