发明名称 Circuit to reduce dropout voltage in a low dropout voltage regulator using a dynamically controlled sat catcher
摘要 An integrated circuit voltage regulator employs a PNP pass transistor to produce a low dropout voltage. Saturation in the pass transistor produces excessive substrate current which appears in the form of wasted current which lowers the regulator efficiency. A current conducted by the sat catcher circuit is employed to avoid pass transistor saturation. The sat catcher is controlled dynamically so the dropout voltage is minimized and the voltage regulator maintains good performance at high regulator output currents.
申请公布号 US5410241(A) 申请公布日期 1995.04.25
申请号 US19930036777 申请日期 1993.03.25
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 CECIL, JAMES B.
分类号 G05F3/30;(IPC1-7):G05F3/16 主分类号 G05F3/30
代理机构 代理人
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